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SPECIFICATION
Device Name Type Name Spec. No.
: : :
IGBT MODULE
2MBI150U4H-170 MS5F 6144
Jun. 01 '05 Jun. 01 '05
S.Miyashita T.Miyasaka
Y.Seki
K.Yamada
MS5F6144
1
a b
13
H04-004-07b
Revised
Date Classification Ind. Content
Records
Applied date Issued date Drawn Checked Checked Approved
Jun.-01 -'05
Enactment
T.Miyasaka K.Yamada
Y.Seki
Oct.-25-'05
Revision
a
Revised characteristics VCE(sat) (P4/13)
S.Miyashita
O.Ikawa
K.Yamada
T.Miyasaka
May.-31 -'06
Revision
b
Revised Reliability test results (P8/13)
H.Kakiki
M.Watanabe
K.Yamada T.Miyasaka
MS5F6144
2 13
a b
H04-004-06b
2MBI150U4H-170
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
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3.Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified
Items Collector-Emitter voltage Gate-Emitter voltage Sym bols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Viso AC : 1min. Continuous 1ms Tc=25C Tc=80C Tc=25C Tc=80C Conditions Maximum Ratings 1700 20 200 150 400 300 150 300 780 150 -40 ~ +125 3400 3.5 4.5 Units V V
A
Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage Screw Torque Mounting (*2) Terminals (*3)
1ms 1 device
W C VAC Nm
(*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6) (*3) Recommendable Value : Terminals 3.5~4.5 Nm (M6)
4. Electrical characteristics ( at Tj= 25C unless otherwise specified)
Items
Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time
Symbols
ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R lead
Conditions
VGE = 0V VCE = 1700V VCE = 0V VGE=20V VCE = 20V Ic = 150mA Tj= 25C Tj=125C Tj= 25C Ic = 150A Tj=125C VCE=10V,VGE=0V,f=1MHz VGE=15V Vcc = 900V Ic = 150A VGE=15V Rg = 3.3 Tj= 25C Tj=125C Tj= 25C Tj=125C
Characteristics min. typ. max.
4.5 a a
Units
mA nA V
6.5 2.40 2.80 2.25 2.65 14 0.62 0.39 0.05 0.55 0.09 1.90 2.10 1.80 2.00 0.53
a
2.0 400 8.5 2.55 2.40 1.20 0.60 1.50 0.30 2.25 2.15 0.6 -
V
nF
s
Turn-off time
VGE=0V IF = 150A IF = 150A
Forward on voltage
V
Reverse recovery time Lead resistance, terminal-chip(*4)
s m
(*4) Biggest internal terminal resistance among arm.
a b
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5. Thermal resistance characteristics Items
Thermal resistance(1device) Contact Thermal resistance (1device) (*5)
Symbols
Rth(j-c) Rth(c-f) IGBT FWD
Conditions
Characteristics min. typ. max.
0.025 0.17 0.28 -
Units
C/W
with Thermal Compound
(*5) This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module Logo of production
2MBI150U4H-170
150A 1700V
Lot.No.
Place of manufacturing (code)
7.Applicable category
This specification is applied to IGBT Module named 2MBI150U4H-170 .
8.Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35C and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time

90%
0V VGE
L
0V tr r Ir r
90%

VCE
V cc
Ic
90%
RG VGE
VCE Ic
0V 0A
tr ( i ) tr to n to f f

Ic
10%
10%
VCE tf
10%
10. Packing and Labeling
Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
a b
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11. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test methods and conditions : 40N : 101 sec. : 2.5 ~ 3.5 Nm (M5) 3.5 ~ 4.5 Nm (M6) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
(Aug.-2001 edition)
Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1)
Mechanical Tests
Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B
3 Vibration
5
(0:1)
4 Shock
Test Method 404 Condition code B
5
(0:1)
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Environment Tests
5 Temperature Cycle
5
(0:1)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
Test Method 307 method Condition code A
5
(0:1)
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Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1)
(Aug.-2001 edition)
Test Method 101
Test temp. Bias Voltage Bias Method
Endurance Tests Endurance Tests
Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(0:1)
: Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 C 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
o
Test Method 102 Condition code C
5
(0:1)
4 Intermitted Operating Life (Power cycle) ( for IGBT )
Test Method 106
5
(0:1)
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV Note
Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others
USLx1.2 Broken insulation The visual sample
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
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Reliability Test Results
Test categories Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample
Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A
Test items
Mechanical Tests
1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage
5 5 5 5 5 5 5 5 5 5
b
0 0 0 0 0 0 0 0 0 0
Environment Tests
3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock
1 High temperature Reverse Bias Test Method 101
5 5 5 5
b
0 0
Endurance Tests
2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
Test Method 101 Test Method 102 Condition code C Test Method 106
b
0 0
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Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
400 350
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C/ chip
400 350 VGE=20V 15V
VGE=20V 15V
12V
Collector current : Ic [A]
250 200 150 100 50 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 8V 10V
Collector current : Ic [A]
300
300 250 200 150 100 50 0 0 1 2 3 4
12V
10V
8V
5
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
400 350
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
10
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [A]
300 250 200 150 100 50 0 0 1 2
Tj=25C Tj=125C
8
6
4 Ic=300A Ic=150A Ic=75A
2
0 3 4 5 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
1000.0
Dynamic Gate charge (typ.) Vcc=900V Ic=150ATj= 25C
Capacitance : Cies, Coes, Cres [ nF ]
VCE VGE
100.0 Cies 10.0
1.0
Coes Cres
0.1 0 10 20 30 0 100 200 300 400 500 Collector-Emitter voltage : VCE [V] Gate charge : Qg [nC]
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Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=3.3, Tj= 25C
10000 10000
Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=3.3, Tj=125C
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
1000
ton toff tr tf
1000
toff ton tr
100
100
tf
10 0 50 100 150 200 250 300 Collector current : Ic [A]
10 0 50 100 150 200 250 300 Collector current : Ic [A]
Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=150A, VGE=15V, Tj= 25C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
10000 70 60 50 40 30 20 10 0 0.1 1.0 10.0 100.0 1000.0
Switching loss vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=3.3
Switching time : ton, tr, toff, tf [ nsec ]
Eoff(125C) Eon(125C)
1000 ton toff tr
Err(125C) Eoff(25C) Eon(25C) Err(25C)
100
tf
10 Gate resistance : RG []
0
50
100
150
200
250
300
Collector current : Ic [A]
Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=150A, VGE=15V, Tj= 125C
200 Eon
Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 3.3 ,Tj <= 125C
400
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
100
Collector current : Ic [A]
1000.0
150
300
200
50
Eoff
100
Err 0 0.1 1.0 10.0 100.0 Gate resistance : RG [] 0 0 500 1000 1500 Collector-Emitter voltage : VCE [V]
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Forward current vs. Forward on voltage (typ.) chip
400 350 1000
Reverse recovery characteristics (typ.) Vcc=900V, VGE=15V, Rg=3.3
Forward current : IF [A]
300 250 200 150 100 50 0 0 1
Tj=25C Tj=125C
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Irr (125C) trr (25C) 100
trr (125C) Irr (25C)
10 2 3 4 0 50 100 150 200 250 300 Forward on voltage : VF [V] Forward current : IF [A]
Transient thermal resistance(max.)
1.000
Thermal resistanse : Rth(j-c) [ C/W ]
FWD IGBT 0.100
0.010
0.001 0.001
0.010
0.100
1.000
Pulse width : Pw [sec]
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity.
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Warnings
- Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE
Cautions
- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
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